Nitrogen in silicon for room temperature single-electron tunneling devices

Single electron transistor (SET) is an advanced tool to exploit in quantum devices. Working of such devices at room-temperature essential for practical utilization. Dopant based single-electron are well studied low-temperature although a few developed high-temperature operation with certain limitations. Here, we propose and theoretically exhibit that nitrogen (N) donor silicon important candidate effective designing Theoretical calculation density-of-states using semi-empirical DFT method indicates N-donor has deep ground state compared phosphorus (P) donor. spectrum explored nano-silicon along the P-donor. Comparative data Bohr radius P-donor also reported. The simulated current-voltage characteristics confirm N-doped device better suited SET room-temperature.